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Chip makers to start joint research for MRAM’s mass-production techniques

A consortium of more than 20 Japan and U.S. based chip manufacturers are joining hands in an effort to develop a way to mass produce the next generation chip technology to replace the currently available DRAM chips- magnetoresistive random access memory- MRAM.

According to the reports that some of the companies who are included in this research are Tokyo Electron, Shin-Etsu Chemical, Renesas Electronics, Hitachi and Micron. The research will be done by companies who will send their in-house researchers to Tohoku University in Japan. The research will start in February 2014.

Few companies have been conducting their own research, or researching in a much smaller group. It was pointed out that Toshiba and SK Hynix have been developing MRAM as a separate project, whereas Samsung has been involved in their own research efforts as well.

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MRAM is considered to be the next step in the evolution for computer memory which is dominated by a long-standing technology- DRAM. Its been said that MRAM will have a memory capacity of upto 10 times in comparison to DRAM, while maintaining 2/3rds of power draw compared with its predecessor.

Interestingly, this news came out days after Buffalo Memory’s announcement of the first STT-MRAM product, which is their industrial SATA III SSD under S6C series which will use MRAMs made by Everspin as  a cache memory. Buffalo confirmed that there were able to get better access time and power consumption, along with the better tolerance against sudden power loss.

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