A consortium of more than 20 Japan and U.S. based chip manufacturers are joining hands in an effort to develop a way to mass produce the next generation chip technology to replace the currently available DRAM chips- magnetoresistive random access memory- MRAM.
According to the reports that some of the companies who are included in this research are Tokyo Electron, Shin-Etsu Chemical, Renesas Electronics, Hitachi and Micron. The research will be done by companies who will send their in-house researchers to Tohoku University in Japan. The research will start in February 2014.
Few companies have been conducting their own research, or researching in a much smaller group. It was pointed out that Toshiba and SK Hynix have been developing MRAM as a separate project, whereas Samsung has been involved in their own research efforts as well.
MRAM is considered to be the next step in the evolution for computer memory which is dominated by a long-standing technology- DRAM. Its been said that MRAM will have a memory capacity of upto 10 times in comparison to DRAM, while maintaining 2/3rds of power draw compared with its predecessor.
Interestingly, this news came out days after Buffalo Memory’s announcement of the first STT-MRAM product, which is their industrial SATA III SSD under S6C series which will use MRAMs made by Everspin as a cache memory. Buffalo confirmed that there were able to get better access time and power consumption, along with the better tolerance against sudden power loss.