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HyperX Genesis
HyperX Genesis

Kingston KHX1600C9D3P1K28G HyperX Genesis PnP 8GB CL9 DDRIII Memory Review

  1. Introduction
  2. Product packaging, specifications and First Impressions
  3. Test Setup and Benchmarks
  4. View All

This kit was officially announced at 25th April.

Fountain Valley, CA — April 25, 2011 — Kingston Technology Company, Inc., the independent world leader in memory products, today announced the new HyperX® Plug and Play (PnP) series of high-performance enthusiast memory. HyperX PnP are the first modules to scale the higher memory heights that are a part of the second generation Intel® Core™ i5 and i7 CPUs. The memory is programmed with faster frequencies and when ‘plugged’ into a system using the Sandy Bridge chipset, will automatically ‘play’ at either 1600MHz or 1866MHz in both desktop and notebook PCs.

The modules are programmed using JEDEC-compliant settings, allowing 1600MHz and 1866MHz frequency support. It is as simple as plugging in the memory and turning on the machine, as the system automatically recognizes faster memory speed with no further BIOS settings required. Users will notice performance gains as overclocking is automatic with the HyperX Plug and Play modules. In addition, the modules are backwards compatible with previously released DDR3 systems on the market.



  • JEDEC standard 1.5V ± 0.075V Power Supply
  • VDDQ = 1.5V ± 0.075V
    • 800MHz fCK for 1600Mb/sec/pin
    • 8 independent internal bank
    • Programmable CAS Latency: 5,6,7,8,9,10,11
    • Posted CAS
    • Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
    • Programmable CAS Write Latency(CWL) = 8(DDR3- 1600)
    • 8-bit pre-fetch
    • Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
    • Bi-directional Differential Data Strobe
    • Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
    • On Die Termination using ODT pin
    • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
    • Asynchronous Reset
    • PCB : Height 1.18” (30.00mm) double side component
    • RoHS Compliant


    • CL(IDD): 9 cycles
    • Row Cycle Time (tRCmin): 48.125ns (min.)
    • Refresh to Active/Refresh Command Time (tRFCmin): 160ns
    • Row Active Time (tRASmin): 33.75ns (min.)
    • Power: TBD (operating per module)
    • UL Rating: 94 V – 0
    • Operating Temperature: 0o C to 85o C
    • Storage Temperature: -55o C to +100o C


    • DDR3-1600 CL9-9-9 @1.5V
    • DDR3-1333 CL8-8-8 @1.5V
    • DDR3-1066 CL6-6-6 @1.5V

    The memory modules have 4GB 512Mx 64-Bit Chips per stick . As its clear on the pictures, it comes with low profile heatspreaders.

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